The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors

Authors

  • O. V. Dvornikov Public Joint Stock Company "MNIPI", Belarus
  • V. L. Dziatlau Public Joint Stock Company "MNIPI", Belarus
  • N. N. Prokopenko Don State Technical University; Institute for Design Problems in Microelectronics of RAS, Russian Federation
  • V. A. Tchekhovski Institute for Nuclear Problems BSU, Belarus

DOI:

https://doi.org/10.20535/RADAP.2017.71.40-45

Keywords:

radiation hardness, SiGe-transistors, analog microcircuits, gamma rays, main static characteristics of transistor

Abstract

The article considers the effect of 60Co gamma rays on the characteristics (the major ones for the analog ICs) of SiGe n-p-n transistors of SGB25V technology: the voltage across the forward-biased base-emitter junction, the dependence of the static base current gain in the common-emitter (CE) configuration on emitter current, the output characteristic in the CE configuration.

Author Biographies

O. V. Dvornikov, Public Joint Stock Company "MNIPI"

Dvornikov О. V.

V. L. Dziatlau, Public Joint Stock Company "MNIPI"

Dziatlau V. L.

N. N. Prokopenko, Don State Technical University; Institute for Design Problems in Microelectronics of RAS

Prokopenko N. N.

V. A. Tchekhovski, Institute for Nuclear Problems BSU

Tchekhovski V. А.

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Published

2017-12-30

Issue

71

Section

Functional Electronics. Micro- and Nanoelectronic Technology

License

Copyright (c) 2020 O. V. Dvornikov, V. L. Dziatlau, N. N. Prokopenko, V. A. Tchekhovski

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