The main characteristics of SiGe HBTs at low temperatures

Authors

  • О. V. Dvornikov Public Joint Stock Company "MNIPI", Belarus
  • V. А. Tchekhovski Institute for Nuclear Problems BSU, Belarus
  • V. L. Dziatlau Public Joint Stock Company "MNIPI", Belarus
  • N. N. Prokopenko Don State Technical University, Russian Federation

DOI:

https://doi.org/10.20535/RADAP.2016.66.87-96

Keywords:

SiGe bipolar transistors, low temperatures, temperature of liquid nitrogen

Abstract

The current-voltage curves (CVC) of n-p-n SiGe heterojunction bipolar transistors (HBT) are considered within the temperature range from minus -195˚С up to 25˚С, produced on the SGB25V technology of IHP. The experimental setup, the measurement technique and the connection features of transistors for elimination of the self-excitation are described. The special attention is paid to the temperature dependences of the static base current gain βF in the common-emitter configuration (CEC) and to the output CVC characteristics of transistor in the CEC.

Author Biographies

О. V. Dvornikov, Public Joint Stock Company "MNIPI"

Dvornikov О. V.

V. А. Tchekhovski, Institute for Nuclear Problems BSU

Tchekhovski V. А.

V. L. Dziatlau, Public Joint Stock Company "MNIPI"

Dziatlau V. L. 

N. N. Prokopenko, Don State Technical University

Prokopenko N. N.

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Published

2016-09-30

Issue

66

Section

Functional Electronics. Micro- and Nanoelectronic Technology

License

Copyright (c) 2020 О. V. Dvornikov, V. А. Tchekhovski, V. L. Dziatlau, N. N. Prokopenko

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