The main characteristics of SiGe HBTs at low temperatures


  • О. V. Dvornikov Public Joint Stock Company "MNIPI", Belarus
  • V. А. Tchekhovski Institute for Nuclear Problems BSU, Belarus
  • V. L. Dziatlau Public Joint Stock Company "MNIPI", Belarus
  • N. N. Prokopenko Don State Technical University, Russian Federation



SiGe bipolar transistors, low temperatures, temperature of liquid nitrogen


The current-voltage curves (CVC) of n-p-n SiGe heterojunction bipolar transistors (HBT) are considered within the temperature range from minus -195˚С up to 25˚С, produced on the SGB25V technology of IHP. The experimental setup, the measurement technique and the connection features of transistors for elimination of the self-excitation are described. The special attention is paid to the temperature dependences of the static base current gain βF in the common-emitter configuration (CEC) and to the output CVC characteristics of transistor in the CEC.

Author Biographies

О. V. Dvornikov, Public Joint Stock Company "MNIPI"

Dvornikov О. V.

V. А. Tchekhovski, Institute for Nuclear Problems BSU

Tchekhovski V. А.

V. L. Dziatlau, Public Joint Stock Company "MNIPI"

Dziatlau V. L. 

N. N. Prokopenko, Don State Technical University

Prokopenko N. N.






Functional Electronics. Micro- and Nanoelectronic Technology